Aluminum nitride ceramics have a series of excellent properties such as excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches silicon. It is a new type of excellent comprehensive performance. Ceramic materials are considered to be ideal materials for a new generation of highly integrated semiconductor substrates and electronic device packaging. Aluminum nitride (AlN) is a hexagonal crystal, and pure AlN is blue-white, usually gray or off-white.

The preparation method of aluminum nitride ceramics is basically similar to the preparation process of other ceramic materials. There are three preparation processes: powder synthesis, molding and sintering.

Aluminum nitride powder is used as the raw material for the preparation of final ceramic products. Its purity, particle size, oxygen content and content of other impurities have an important impact on the thermal conductivity, subsequent sintering, and forming process of the subsequent products. Whether the final product has excellent performance or not cornerstone. The synthesis methods of aluminum nitride powder are as follows: direct nitridation method, carbothermal reduction method, self-propagating high temperature synthesis method, chemical vapor deposition method

There are many molding processes for aluminum nitride powder, and traditional molding processes such as molding, hot pressing, and isostatic pressing are all applicable. Due to the strong hydrophilicity of aluminum nitride powder, in order to reduce the oxidation of aluminum nitride, contact with water should be avoided as much as possible during the molding process. In addition, although hot pressing and isostatic pressing are suitable for preparing high-performance bulk aluminum nitride ceramic materials, they have high cost and low production efficiency, and cannot meet the increasing demand for aluminum nitride ceramic substrates in the electronics industry.